RFD12N06RLESM
Test Circuits and Waveforms
V DS
BV DSS
L
t P
V DS
VARY t P TO OBTAIN
REQUIRED PEAK I AS
R G
+
V DD
I AS
V DD
V GS
DUT
-
0V
t P
I AS
0.01 ?
0
t AV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
V DS
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
V GS
R L
+
V DD
V DS
Q g(5)
Q g(TOT)
V GS = 10V
I g(REF)
DUT
-
V DD
0
V GS
V GS = 1V
Q g(TH)
Q gs
Q gd
V GS = 5V
I g(REF)
0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
V DS
R L
V DS
t ON
t d(ON)
90%
t r
t OFF
t d(OFF)
t f
90%
V GS
+
-
V DD
0
10%
10%
R GS
DUT
90%
V GS
50%
50%
V GS
FIGURE 21. SWITCHING TIME TEST CIRCUIT
?2002 Fairchild Semiconductor Corporation
0
10%
PULSE WIDTH
FIGURE 22. SWITCHING TIME WAVEFORM
RFD12N06RLESM Rev. C0
相关PDF资料
RFD14N05SM9A MOSFET N-CH 50V 14A DPAK
RFD16N05LSM MOSFET N-CH 50V 16A TO-252AA
RFD16N06LESM9A MOSFET N-CH 60V 16A DPAK
RFP12N10L MOSFET N-CH 100V 12A TO-220AB
RFP14N05L MOSFET N-CH 50V 14A TO-220AB
RFP3055LE MOSFET N-CH 60V 11A TO-220AB
RFP50N06 MOSFET N-CH 60V 50A TO-220AB
RFRXD0920-I/LQ MODULE RCVR 868/915MHZ ASK/FSK
相关代理商/技术参数
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
RFD12N06RLESM9A 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD14LN05SM 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD14N05 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD14N05 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK
RFD14N05_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD14N05_Q 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube